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Freescale Semiconductor ` Technical Data
Document Number: MRF6VP2600H Rev. 1, 7/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications. * Typical DVBT OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain -- 25 dB Drain Efficiency -- 28.5% ACPR @ 4 MHz Offset -- - 61 dBc @ 4 kHz Bandwidth * Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 25.3 dB Drain Efficiency -- 59% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 sec, Duty Cycle = 20% Features * Integrated ESD Protection * Excellent Thermal Stability * Designed for Push - Pull Operation * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP2600HR6
10 - 250 MHz, 600 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230 PART IS PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 6.0, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 99C, 125 W CW Symbol RJC Value (1,2) 0.20 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6VP2600HR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS V(BR)DSS IDSS IDSS
Min -- 110 -- --
Typ -- -- -- --
Max 10 -- 50 2.5
Unit Adc Vdc Adc mA
Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 800 Adc) Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 2600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
VGS(th) VGS(Q) VDS(on)
1 1.5 --
1.65 2.7 0.25
3 3.5 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
1.7 101 287
-- -- --
pF pF pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, DVBT OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ 4 MHz Offset. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. Gps D ACPR IRL 24 27 -- -- 25 28.5 - 61 - 18 27 -- - 59 -9 dB % dBc dB
MRF6VP2600HR6 2 RF Device Data Freescale Semiconductor
VBIAS + C16 + C15 +
B1
R1 L3 L2 L4 C13 C12 C11 C9 C8 C7 C10 C6 C19 C17 C18 C20 C21 C22 + C23 +
VSUPPLY +
C14
C24 C25
Z9 Z5 RF INPUT Z7
Z11 Z13
Z15
Z17 RF OUTPUT
Z1
Z2
L1
Z3
Z4 J1 Z6 Z8 Z10 Z12 Z14 T1 Z16 Z18 T2 Z13, Z14 Z15*, Z16* Z17, Z18 Z19 Z20 PCB DUT C3 C4 J2
Z19
Z20
C1
C2
C5
Z1 Z2* Z3* Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12
1.049 0.143 0.188 0.192 0.418 0.217 0.200 0.375
x 0.080 x 0.080 x 0.080 x 0.133 x 0.193 x 0.518 x 0.518 x 0.214
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
0.224 x 0.253 Microstrip 0.095 x 0.253 Microstrip 0.052 x 0.253 Microstrip 0.053 x 0.080 Microstrip 1.062 x 0.080 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP2600HR6 Test Circuit Schematic
Table 5. MRF6VP2600HR6 Test Circuit Component Designations and Values
Part B1 C1 C2, C4 C3 C5 C6, C9 C7, C13, C20 C8 C10, C17, C18 C11, C22 C12, C21 C14 C15 C16 C19 C23, C24, C25 J1, J2 L1 L2 L3 L4* R1 T1 T2 Description 95 , 100 MHz Long Ferrite Bead 47 pF Chip Capacitor 43 pF Chip Capacitors 100 pF Chip Capacitor 10 pF Chip Capacitor 2.2 F, 50 V Chip Capacitors 10K pF Chip Capacitors 220 nF, 50 V Chip Capacitor 1000 pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 20K pF Chip Capacitors 10 F, 35 V Tantalum Capacitor 22 F, 35 V Tantalum Capacitor 47 F, 50 V Electrolytic Capacitor 2.2 F, Chip Capacitor 470 F 63V Electrolytic Capacitors Jumpers from PCB to T1 & T2 17.5 nH 6 Turn Inductor 8 Turns, #20 AWG ID = 0.125 Inductor, Hand Wound 82 nH Inductor 9 Turns, #18 AWG Inductor, Hand Wound 20 , 3 W Axial Leaded Resistor Balun Balun Part Number 2743021447 ATC100B470JT500XT ATC100B430JT500XT ATC100B101JT500XT ATC100B7R5CT500XT C1825C225J5RAC ATC200B103KT50XT C1812C224J5RAC ATC100B102JT50XT CDR33BX104AKYS ATC200B203KT50XT T491D106K035AT T491X226K035AT 476KXM050M 2225X7R225KT3AB EKME630ELL471MK25S Copper Foil B06T Copper Wire 1812SMS - 82NJ Copper Wire 5093NW20R00J TUI - 9 TUO - 4 Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft Manufacturer Fair - Rite ATC ATC ATC ATC Kemet ATC Kemet ATC Kemet ATC Kemet Kemet Illinois Cap ATC Multicomp
*L4 is wrapped around R1.
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 3
B1 C13 C12 C11 C15 C14 C9 C8 C7 C6 J1 CUT OUT AREA L2 C10 T1 C4 L3 L4, R1* C18
C16
+
C22 C21 C20
C17 T2 J2
C1
L1
C2
C3 (on side)
MRF6VP2600H 225 MHz Rev. 3
* L4 is wrapped around R1.
Figure 3. MRF6VP2600HR6 Test Circuit Component Layout
MRF6VP2600HR6 4 RF Device Data Freescale Semiconductor
-
C23
C24
-
C25
-
C19
C5
TYPICAL CHARACTERISTICS
1000 Ciss C, CAPACITANCE (pF) Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) 100 TJ = 200_C TJ = 175_C TJ = 150_C 10
10
Crss
TC = 25_C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage
26.5 26 Gps, POWER GAIN (dB) 25.5 25 24.5 24 23.5 23 22.5 10 100 Pout, OUTPUT POWER (WATTS) PULSED VDD = 50 Vdc, IDQ = 2600 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% Gps 80 70 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 50 D 40 30 20 10 0 1000 64
Figure 5. DC Safe Operating Area
P3dB = 59.7 dBm (938 W) 62 P2dB = 59.1 dBm (827 W) 60 58 56 54 52 27 P1dB = 53.3 dBm (670 W)
Ideal
Actual
VDD = 50 Vdc, IDQ = 2600 mA, f = 225 MHz Pulse Width = 12 sec, Duty Cycle = 1% 28 29 30 31 32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
26 28 27 25 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 50 V 24 45 V 23 VDD = 50 Vdc IDQ = 2600 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% 0 100 200 300 35 V VDD = 30 V 400 500 600 700 21 10 40 V 26 25_C 25 85_C 24 23 22
Figure 7. Pulsed CW Output Power versus Input Power
80 Gps 70 60 50 40 VDD = 50 Vdc, IDQ = 2600 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% D 30 20 10 1000 D, DRAIN EFFICIENCY (%)
TC = -30_C
22
21
100 Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- TWO - TONE
IMD, INTERMODULATION DISTORTION (dBc) VDD = 50 Vdc, IDQ = 2600 mA, f1 = 222 MHz f2 = 228 MHz, Two-Tone Measurements -30 IMD, INTERMODULATION DISTORTION (dBc) -20 -10 VDD = 50 Vdc, Pout = 500 W (PEP), IDQ = 2600 mA Two-Tone Measurements -20
-40 3rd Order -50 5th Order -60 7th Order -70 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 700
-30
3rd Order
-40
5th Order 7th Order
-50
-60 0.1 1 TWO-TONE SPACING (MHz) 10 40
Figure 10. Intermodulation Distortion Products versus Output Power
26 IDQ = 2600 mA 2300 mA 25 2000 mA 24.5 1800 mA 24 1300 mA 23.5 20 100 Pout, OUTPUT POWER (WATTS) PEP 700 VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz Two-Tone Measurements, 6 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45
Figure 11. Intermodulation Distortion Products versus Tone Spacing
VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz Two-Tone Measurements, 6 MHz Tone Spacing
25.5 Gps, POWER GAIN (dB)
IDQ = 1300 mA 2600 mA 1800 mA
2000 mA -50 20
2300 mA 100 Pout, OUTPUT POWER (WATTS) PEP 700
Figure 12. Two - Tone Power Gain versus Output Power
Figure 13. Third Order Intermodulation Distortion versus Output Power
MRF6VP2600HR6 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- OFDM
100 -20 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 12 PEAK-TO-AVERAGE (dB) -30 -40 -50 -60 8K Mode DVTB OFDM 64 QAM Data Carrier Modulation 5 Symbols -70 -80 -90 -100 -110 -5 -4 -3 -2 -1 0 1 2 3 4 5 f, FREQUENCY (MHz) 8K Mode DVTB OFDM 64 QAM Data Carrier Modulation, 5 Symbols ACPR Measured at 4 MHz Offset from Center Frequency 4 kHz BW 4 kHz BW 7.61 MHz
Figure 14. Single - Carrier DVTB OFDM
25.8 25.6 Gps, POWER GAIN (dB) 25.4 25.2 25 1800 mA 24.8 24.6 24.4 24.2 30 1300 mA VDD = 50 Vdc, f = 225 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols 100 Pout, OUTPUT POWER (WATTS) AVG. 200 IDQ = 2600 mA 2300 mA 2000 mA ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -56 -58 -60 -62
Figure 15. 8K Mode DVBT OFDM Spectrum
VDD = 50 Vdc, f = 225 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols
IDQ = 1300 mA -64 1800 mA -66 -68 20 2000 mA 2300 mA 2600 mA 100 Pout, OUTPUT POWER (WATTS) AVG. 200
Figure 16. Single - Carrier DVBT OFDM Power Gain versus Output Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 45
Figure 17. Single - Carrier DVBT OFDM ACPR versus Output Power
-56 25_C -30_C -58 -60 D -62 85_C ACPR ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
40 35 30 25_C 25 85_C 20 15 30 TC = -30_C
Gps -64 VDD = 50 Vdc, IDQ = 2600 MHz f = 225 MHz, 8K Mode OFDM -66 64 QAM Data Carrier Modulation 5 Symbols -68 100 400 Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Single - Carrier DVBT OFDM ACPR Power Gain and Drain Efficiency versus Output Power
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
109 109
108 MTTF (HOURS) MTTF (HOURS) 90 110 130 150 170 190 210 230 250
108
107
107
106
106
105 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 125 W Avg., and D = 28.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 600 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 59%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 19. MTTF versus Junction Temperature - CW
Figure 20. MTTF versus Junction Temperature - Pulsed
MRF6VP2600HR6 8 RF Device Data Freescale Semiconductor
Zsource f = 225 MHz
Zo = 10
Zload f = 225 MHz
VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg. f MHz 225 Zsource W 1.42 + j8.09 Zload W 4.45 + j1.16
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 21. Series Equivalent Source and Load Impedance
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 9
C1
B1
C19
C4 C5 C6 C2 C3 C7 C8 C9 C11 L2 C10 T1 L4 C22 J1 C23 L5 L3 C12 L1 L6, R1*
C17 C16 C15
C18
C20
C14 C13 T2 C25 J2 C21
C24
C26
MRF6VP2600H 88-108 MHz Rev. 1
* L6 is wrapped around R1.
Figure 22. MRF6VP2600HR6 Test Circuit Component Layout -- 88 - 108 MHz
MRF6VP2600HR6 10 RF Device Data Freescale Semiconductor
Table 6. MRF6VP2600HR6 Test Circuit Component Designations and Values -- 88 - 108 MHz
Part B1 C1 C2 C3 C4, C9, C15 C5, C16 C6, C17 C7, C11 C8 C10, C13, C14 C12 C18, C19, C20 C21 C22, C23 C24 C25 C26 J1, J2 L1 L2 L3 L4, L5 L6* R1 T1 T2 Description 95 , 100 MHz Long Ferrite Bead 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 10K pF Chip Capacitors 20K pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 220 nF, 50 V Chip Capacitor 1000 pF Chip Capacitors 33 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitors 2.2 F, 100 V Chip Capacitor 120 pF, Chip Capacitors 150 pF Chip Capacitor 100 pF Chip Capacitor 15 pF Chip Capacitor Jumpers from PCB to T1 & T2 82 nH Inductor 8 Turns, #20 AWG ID = 0.125 Inductor, Hand Wound 120 nH Inductor 12.5 nH 4 Turn Inductor 9 Turns, #18 AWG Inductor, Hand Wound 20 , 3 W Axial Leaded Resistor Balun Transformer Balun Transformer Part Number 2743021447 476KXM050M T491X226K035AT T491D106K035AT ATC200B103KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC C1812C224J5RAC ATC100B102JT50XT ATC100B330JT500XT EKME630ELL471MK25S G2225X7R225KT3AB ATC100B121JT500XT ATC100B151JT500XT ATC100B101JT500XT ATC100B150JT500XT Copper Foil 1812SMS - 82NJ Copper Wire 1812SMS - R12J A04T Copper Wire 5093NW20R00J TUI - 9 TUO - 9 Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft CoilCraft Manufacturer Fair - Rite Illinois Cap Kemet Kemet ATC ATC AVX Kemet Kemet ATC ATC MultiComp ATC ATC ATC ATC ATC
*L6 is wrapped around R1.
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 11
TYPICAL CHARACTERISTICS -- 88 - 108 MHz
28 27 Gps, POWER GAIN (dB) 26 25 24 23 22 21 10 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 108 MHz 88 MHz 98 MHz D VDD = 50 Vdc IDQ = 150 mA Pulse Width = 100 sec Duty Cycle = 20% Gps 80 70 60 108 MHz 88 MHz 50 98 MHz 40 30 20 10 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%)
Figure 23. Broadband Pulsed Power Gain and Drain Efficiency versus Output Power -- 88 - 108 MHz
29 28.5 28 Gps, POWER GAIN (dB) 27.5 27 26.5 26 25.5 25 24.5 24 88 90 92 94 96 98 100 102 104 106 f, FREQUENCY (MHz) 45 108 IRL 50 Gps 55 VDD = 50 Vdc, Pout = 600 W Peak, IDQ = 150 mA Pulse Width = 100 sec, Duty Cycle = 20% D 65 70
-5 -7 -9 -11 -13 -15
Figure 24. Pulsed Power Gain, Drain Efficiency and IRL versus Frequency -- 88 - 108 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 20 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 50 Vdc, IDQ = 2600 mA 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols 98 MHz 88 MHz Gps D 88 MHz 98 MHz 108 MHz -55 ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-60
108 MHz
ACPR 98 MHz 108 MHz
88 MHz
-65
-70 300
Figure 25. Single - Carrier DVBT OFDM ACPR, Power Gain and Drain Efficiency versus Output Power -- 88 - 108 MHz
MRF6VP2600HR6 12 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
60
TYPICAL CHARACTERISTICS -- 88 - 108 MHz
29 28.5 28 Gps, POWER GAIN (dB) 27.5 27 26.5 26 25.5 25 24.5 24 88 90 92 94 96 98 100 102 104 106 f, FREQUENCY (MHz) 45 108 IRL 50 Gps 55 VDD = 50 Vdc, IDQ = 150 mA D 65 D, DRAIN EFFICIENCY (%) 70
-5 -10 -12 -14 -16 -18
Figure 26. CW Power Gain, Drain Efficiency and IRL versus Frequency -- 88 - 108 MHz
IRL, INPUT RETURN LOSS (dB)
60
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 13
Zsource f = 108 MHz f = 88 MHz
Zo = 25
f = 88 MHz
Zload f = 108 MHz
VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg. f MHz 88 98 108 Zsource W 6.3 + j19.4 6.8 + j17.2 4.0 + j17.8 Zload W 4.75 + j3.45 4.82 + j3.22 4.96 + j3.18
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 27. Series Equivalent Source and Load Impedance -- 88 - 108 MHz
MRF6VP2600HR6 14 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 15
MRF6VP2600HR6 16 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Mar. 2008 July 2008 * Initial Release of Data Sheet * Removed Capable of Handling 5:1 VSWR bullet, p. 1 * Corrected Zsource and Zload values from 1.58 + j6.47 to 1.42 + j8.09 and 4.60 + j1.85 to 4.45 + j1.16 and replotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9 Description
MRF6VP2600HR6 RF Device Data Freescale Semiconductor 17
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MRF6VP2600HR6
Rev. 18 1, 7/2008 Document Number: MRF6VP2600H
RF Device Data Freescale Semiconductor

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